AO4842 30v dual n-channel mosfet product summary v ds (v) = 30v i d = 7.7a (v gs = 10v) r ds(on) < 21m w (v gs = 10v) r ds(on) < 30m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4842 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in buck converters. soic-8 top view bottom view pin1 g2 d2 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view symbol v ds v gs i dm t j , t stg symbol typ max 50 62.5 82 110 r q jl 41 50 absolute maximum ratings t a =25c unless otherwise noted parameter maximum units drain-source voltage 30 v gate-source voltage 20 v a t a =70c 6.5 pulsed drain current b 64 continuous drain current af t a =25c i d 7.7 t a =70c 1.44 w power dissipation t a =25c p d 2 steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a AO4842 30v dual n-channel mosfet product summary v ds (v) = 30v i d = 7.7a (v gs = 10v) r ds(on) < 21m w (v gs = 10v) r ds(on) < 30m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4842 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in buck converters. soic-8 top view bottom view pin1 g2 d2 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view alpha & omega semiconductor, ltd. www.aosmd.com
AO4842 symbol min typ max units bv dss 30 v 0.004 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.1 2.6 v i d(on) 64 a 16.8 21 t j =125c 24 29 23.4 30 m w g fs 20 s v sd 0.75 1 v i s 2.4 a c iss 373 448 pf c oss 67 pf c rss 41 pf r g 1.8 2.8 w q g (10v) 7.2 11 nc q g (4.5v) 3.5 nc q gs 1.3 nc q gd 1.7 nc t d(on) 4.5 ns dynamic parameters v gs =10v, v ds =15v, i d =7.7a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz input capacitance output capacitance total gate charge gate source charge turn-on delaytime m w v gs =4.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =7.7a maximum body-diode continuous current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =7.7a reverse transfer capacitance alpha & omega semiconductor, ltd. www.aosmd.com t d(on) 4.5 ns t r 2.7 ns t d(off) 14.9 ns t f 2.9 ns t rr 10.5 12.6 ns q rr 4.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.95 w , r gen =3 w turn-off fall time turn-on delaytime body diode reverse recovery time body diode reverse recovery charge i f =7.7a, di/dt=100a/ m s i f =7.7a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user 's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev5: may. 2012 alpha & omega semiconductor, ltd. www.aosmd.com
AO4842 typical electrical and thermal characteristics 25 125 c v ds =5v v gs =4.5v v gs =10v 5v 6v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =5v 10 15 20 25 30 35 40 0 5 10 15 20 r ds(on) (m w ww w ) v gs =4.5v v gs =10v 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v v gs =4.5v alpha & omega semiconductor, ltd. www.aosmd.com this product has been designed and qualified for th e consumer market. applications or uses as critical out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 25 125 c v ds =5v v gs =4.5v v gs =10v i d =7.5a 25 c 125 5v 6v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =5v 10 15 20 25 30 35 40 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =4.5v v gs =10v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v v gs =4.5v 10 20 30 40 50 60 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =7.7a 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
AO4842 typical electrical and thermal characteristics v gs =10v, v ds =15v, i d =7.4a v gs =10v, v ds =15v, r l =2.0 w , r gen =3 w i =7.4a, di/dt=100a/ m s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 power (w) c oss c rss v ds =15v i d =7.5a t j(max) =150 c t a =25 c 10 m s 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =15v i d =7.7a 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v (volts) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10s alpha & omega semiconductor, ltd. www.aosmd.com i f =7.4a, di/dt=100a/ m s i f =7.4a, di/dt=100a/ m s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance c oss c rss v ds =15v i d =7.5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =62.5 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t a =25 c 10 m s 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =15v i d =7.7a 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10s alpha & omega semiconductor, ltd. www.aosmd.com
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